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Semiconductor Training:
Process Integration for CMOS Nanoscale Technologies -- Seminar Outline
The dazzling array of new technologies and materials available to the microelectronics industry are enabling a new generation of devices that are unprecedented in both their capability and their fabrication complexity. Each new material or technology presents a unique set of advantages and challenges. However, how these groundbreaking semiconductor technologies and microchip materials are integrated into a real world, high yielding process flow is seldom discussed. This seminar focuses on explaining the capabilities and shortfalls of each of these new materials and integrated circuit technologies and presents strategies on how they can be integrated into a coherent whole.
Seminar Fee: $1,795.00
What's included:
a) three days of instruction
b) A high quality set of course notes ($399 value)
c) Three lunches, morning and afternoon refreshments
Who is the seminar intended for?
This course is intended for busy semiconductor professionals who require a thorough understanding of the state-of-the art semiconductor manufacturing and the Process Integration challenges presented at the 45 nm technology node. The course is targeted at chip designers from fabless and merchant suppliers, semiconductor manufacturing managers and engineers, equipment and material suppliers, as well as key decision makers in the semiconductor industry.
Schedule:
8:30 AM until 5:00 PM daily
Location:
The course can be held on-site at your facility
or in a public venue.
For further Information:
Contact Threshold Systems at: (512) 576-6404
support@thresholdsystems.com
DETAILED CONTENTS OF SEMINAR TOPICS:
1. Process Integration -- Introduction
In order to understand the central driving forces that are revolutionizing semiconductor manufacturing, they must first be placed into perspective. Key concepts must be explained, the role of each processing module examined, and the global processing objectives outlined. The first section of the course addresses these fundamental issues.
- Central technical concepts: process node definition, system requirements, key considerations and central processing components
- Diving forces: power, size, cost, yield, scaling, supply voltage
- Enabling technologies: ALD, Cu metallization, Low-k dielectrics, immersion lithography, ultra-thin gate oxides, Strained Silicon, Hi-k, Metal gates
- The fundamental governing equations
2. Advanced Lithography
No other technology plays a more important role in the advancement of microelectronics than photolithography. It is the key technology driver, and an understanding of the breakthroughs in photolithography is central to an understanding of modern silicon processing. At the 90 nm node and below, the features being printed are smaller than the illuminating wavelength. This requires the use of Resolution Enhancement Techniques (RET) such as Optical Proximity Correction (OPC), Off-Axis Illumination (OAI), Inverse Lithography Technology (ILT), and immersion lithography. All of these technologies and more will be presented by a master of the subject, Dr. Moshe Preil.
- Production lithography status - 2006
- 193 immersion lithography (193i); principles, practice & equipment
- Ultra-high NA Lens
- Optical Proximity Correction (OPC)
- Reticle Enhancement Technologies (RET)
- Inverse Lithography Technology (ILT)
- Chemically amplified resists
- EUV Lithography
3. 90 nm Process Integration Issues
Process integration is a term that many engineers use, but with which few are truly conversant. In this section of the course a modern 90 nm process flow, which features strained silicon, is presented in detail. The process integration challenges of each module are discussed at length, as are the most common solutions to these issues.
- Poly gate CD Control
- Boron penetration control
- Poly depletion control
- Strained Silicon integration, local versus global
- Silicide choice
- Etch endpoint control
- Gate etch profile
- Spacer morphology
- Backend metallization Issues
- Low-K integration
4. Advanced Memory Technologies
Few areas of semiconductor research have proven as fertile in recent years as Non-Volatile Memory (NVM). A plethora of new technologies has emerged, each one vying for the prize to be the high-speed, low power, non-volatile replacement for DRAM. Each of these exciting new technologies will be examined in turn, their relative merits and shortcomings presented, and the process integration challenges they pose discussed.
- Non-Volatile memory (NAND & NOR FLASH, EEPROM)
- FerroElectric RAMS (FeRAM)
- Magnetoresistive Random Access Memory (MRAM)
- Ovonics Unified Memory (OUM)
- Programmable Metallization Cell (PMC)
- Nano FG (nanocrystal) NVM
- Resistance Polymer Memory (RPM)
- Nanotube NVM
- Molecular Memory
5. Advanced Packaging Concepts, Practices and Pitfalls
With all of the developments occurring in silicon processing, the dramatic changes that have occurred in packaging technology are often overlooked. However, recent developments in this field have resulted in a series of radical new approaches to packaging microchips that have a profound impact on device functionality and performance. Each of these new packaging technologies is examined in detail and the importance of each scheme assessed.
- Multi-chip Packaging
- Stacked CSPs
- 3D Packaging
- System-on-Package (SOP)
- System-in-a-Package (SIP)
- Flip Chip processing
- Packaging failure modalities
6. Copper Metallization
Copper metallization has matured and entered the mainstream. However, the aggressive scaling dimensions required of metallization schemes at the 65 nm and 45 nm nodes have imposed new demands on the use of copper that previous generations did not (electromigration issues, anomalous resistance increases, barrier materials, current crowding at vias, etc.). In addition, the process integration challenges posed by realizing nine or ten layers of copper metal are formidable. This section of the course examines all of these issues in detail.
- Industry status – 2006
- Barrier & seed materials
- Deposition technologies
- Cu electroplating techniques and via filling challenges
- Copper Integration challenges – CMP, sealing, voiding
- The effects of scaling on Cu resistance
- Electromigration issues
- Advanced multi-layer metallization schemes
7. Low-k Dielectrics
Although transistor gate lengths continued to be scaled to increase device speed, the true limiting factor on device performance is the parasitic RC delay of the metallization scheme. The use of low-resistance copper interconnects is only one-half of the solution scheme. The other half is low-k dielectrics. However, low-k materials, which have always been problematic, pose special concerns at the 65 nm and 45 nm nodes regarding delamination, polishing and structural integrity. This section of the course will examine all of these issues and their proposed solutions.
- Spin-on versus CVD materials
- Fluorinated Silicate Glass (FSG)
- Doped siloxanes & silicates (SiCOH)
- Ultra low k films; porous films, Xerogels
- Process Integrations issues, CMP, pore sealing, barrier materials, adhesion
8. Atomic Layer Deposition (ALD)
ALD is a revolutionary technology that will shortly revolutionize microelectronic manufacturing. It allows for the conformal deposition of ultra-pure materials a single layer of atoms at time. It is already indispensable for the deposition of High-k gate dielectrics, and many believe that it will eventually replace Physical Vapor Deposition (PVD) as the technology of choice for barrier material deposition. In this section you will learn about the characteristics, behavior and limitations of this important new technology.
- What it is and how it works
- Applications: high-k deposition, barrier metals, DRAM dielectrics, and metal gate electrodes
- ALD theory and practice
- ALD equipment
- CVD enhanced ALD
- ALD process integration solutions
- ALD industry status
9. Ion Implantation
Like its counter-part technology, photolithography, ion implantation is a key technology driver and has undergone a dramatic transformation in order to meet the demands of advanced technology nodes. It is the central fabrication technology used to realize ultra-shallow junctions, and one of the key methods used to manufacture Silicon-On-Insulator wafers. In addition, the equipment, methodology and techniques used to dope and anneal wafers have changed radically. This section of the course covers in detail the most current developments in ion implantation technology, ultra shallow junctions and SOI. It is presented by a world authority on the subject, Mr. Robert Simonton.
- Ion Implantation Technology
- Plasma immersion implantation
- Gas Immersion Laser Doping
- Raised Source/Drains
- Ultra Shallow Junctions
- RTP: Soak anneal, Spike anneal, Flash Anneal, Laser Anneal
- Extremely abrupt junctions
- Key integration considerations for HALO, LATIPS, Extension implants
- Silicon-On-Insulator (SOI)
- Advantages and trade-offs
- Simox versus Wafer Bonding SOI
- Partially depleted versus Fully Depleted SOI
- Process integration challenges for SOI
- Strained Silicon on SOI
10. Process Integration challenges for the 65 nm & 45 nm nodes
The process integration problems posed by the 65 nm and 45 nm nodes are unlike any previous generation of technology. Rather than a slow, incremental, evolutionary change, like that experienced at the 180 nm node with the introduction of Copper, the 65/45 nm nodes pose revolutionary changes with a plethora of new materials and technologies all being introduced simultaneously (Hi-k dielectrics, metal gates, nickel silicide, ultra-low-k dielectrics, immersion lithography, ALD, etc.). This section of the course will examine each of these new developments and the special process integration challenges that they present.
- Hi-K: choices, problems and promises
- Metal Gates: function, purpose and choices
- Silicides (Ni, FUSI ) advantages and problems
- Poly CD control at extremely small dimensions
- Poly depletion control
- Ulta-thin gate oxides – nitridation and interface control
- Low-K/Cu integration challenges
The Course Instructors:
The best instructors in the business will be teaching this semiconductor training course. Each instructor is a world-class expert in their respective field, with decades of microchip industry experience. However, Threshold Systems has selected these presenters not just for their deep technical expertise, but also for their ability to present complex technical information in a clear and engaging manner. Each of these instructors is an experienced and skilled public speaker, and the accompanying course notes for this seminar are profusely illustrated with relevant graphics. It is our intention for you to leave this course with a clear understanding of the key enabling technologies that are revolutionizing semiconductor manufacturing.
 |
Jerry Healey |
Jerry Healey has been a technical professional in the semiconductor industry for 19 years, 8 years of which were spent as a Device Engineer at Motorola Semiconductor. He was formerly an instructor for UC Berkeley Extension (College of Engineering), and more recently was employed as a Process Integration Engineer at the Advanced Technology Development Facility, where he worked on 45 nm node development.
He is a renowned lecturer in the field of Silicon Processing, and his areas of expertise include process integration, technology transfer of new processes from R&D into manufacturing, embedded non-volatile memory processing, and mixed signal devices. His audiences remember him for the breadth of his knowledge regarding semiconductor manufacturing, his engaging lecture style, and the insightful color graphics he uses to illustrate his lectures.
An award winning public speaker, Mr. Healey has taught numerous courses to thousands of practicing engineers and scientists over the past 10 years. He has also co-authored over 20 papers in the field of Silicon Processing, and is currently the president of Threshold Systems, a firm that provides consulting services and technical training seminars to the semiconductor industry.
“"Jerry Healey is a superb public
speaker who has a knack for making complex technical subjects
seem clear and understandable."” –- J. Blume,
AMD
 |
Robert Simonton |
Robert Simonton is a world authority on the subject of Ion Implantation, Rapid Thermal Processing, and Front-End-Of-Line (FEOL) processing. He has been a technical professional in the semiconductor industry for nearly thirty years, and during that period he has held a range of high-level technical positions that have afforded him the opportunity to develop a global understanding of semiconductor processing issues.
For the past twenty years, Mr. Simonton has held a variety of senior engineering positions with a number of leading semiconductor process equipment companies (Eaton, Varian etc.) in the areas of advanced product development, strategic marketing and Director of Technologies.
Most recently, Mr. Simonton has lead Simonton Associates, a consulting firm that specializes in resolving high-level technical and managerial issues for leading semiconductor suppliers.
He has authored and co-authored over 40 technical papers and four book chapters on semiconductor process technology, and is a recipient of the SRC Outstanding Industrial Mentor Award.
A renowned lecturer in the field of silicon processing for many years, Mr. Simonton’s audiences remember him best for his technical depth, his broad industry experience, and his engaging, high-energy lecture style.
" “Mr. Simonton is a walking encyclopedia of information
regarding semiconductor processing issues. His knowledge is both
current and leading edge. I really enjoyed his talk immensely.”"
- T. Jamison, Intel
 |
Dr. Moshe Preil |
Moshe Preil is the Global Product Manager and Technical Director for Luminescent Technologies, a Silicon Valley startup company pioneering the development and implementation of Inverse Lithography Technology. ILT is a novel form of Resolution Enhancement Technology that will help extend optical lithography to the 32 nm node and beyond.
Prior to joining Luminescent he spent over 8 years at KLA-Tencor working in various lithography and yield management positions, including reticle inspection, overlay and CD metrology and control, yield enhancement consulting, and advanced lithography strategies. For the preceding 12 years he worked in various areas of optical lithography, doing both advanced development as well as production. In his previous position at Advanced Micro Devices he was involved in the early development of deep-UV technology. He has also been active in the Sematech lithography community, and was a member of the early 193 nm steering committee at Sematech.
A dramatic and engaging public speaker, Dr. Preil has taught numerous courses on the subject of optical lithography, has published extensively in this field, and is widely regarded as a gifted and inspiring instructor.
“Dr. Preil has a commanding knowledge of all aspects of photolithography and possesses the ability to convey his understanding to others. He clearly explained lithographic concepts that have troubled me for years. I was impressed” -- T. Roberts, IBM
 |
| Dr. Neil Henis |
Dr. Neil Henis has over 20 years experience in
semiconductor manufacturing, and in the consumer and automotive
electronics industries. During this period he has worked for Sematech,
Motorola, Freescale and other major semiconductor manufacturers.
He commands a wide range of expertise in the areas of semiconductor
device Physics, semiconductor manufacturing, systems integration,
compound semiconductors and advanced processes for sub 65 nm nodes.
More recently Dr. Henis has been involved with the resolution
of issues concerning device thermal management, reliability and
advanced packaging.
An experienced instructor, Dr. Henis has also developed and taught
numerous courses for engineers, scientists and support personnel
in introductory and advanced silicon processing, as well as semiconductor
device physics. He has also authored and coauthored over thirty
scientific papers on the topics of semiconductor processing, integration
and reliability