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This one-day course examines leading-edge ion implantation and the associated thermal processes that have enabled CMOS device scaling to 65nm & 45nm nodes and beyond.

Course Description:


The objective of this course is to provide a thorough, intermediate-level treatment of leading-edge ion implantation processes and their associated thermal processes. The course content is up to date (65nm & 45nm) and rich in technical detail. This course is appropriate for professional development of process engineers, applications engineers, device engineers, VLSI design engineers, technical marketing engineers and managers, and process equipment engineers and scientists who wish to bring their understanding of advanced technology trends enabling the scaling of CMOS transistors and isolation structures to 65nm & 45nm technology nodes. The material is presented using intuitive visual illustrations linked to relevant physics equations, supported by state-of-the-art 2D & 3D graphics and numerous SEM and TEM photographs of real world, leading-edge CMOS device structures. Key references are provided for independent follow-up studies.

In the past several years, ion implantation and associated thermal processes have dramatically evolved to accommodate the requirements for scaling CMOS logic transistor scaling to 65nm & 45nm technology nodes. This has resulted in significant changes to both ion implantation and thermal processes and process equipment. The course lectures comprehensively cover the key developments in ion implantation processing, associated thermal processing, and integration strategies that enable CMOS logic transistor scaling to 65nm & 45nm technology nodes. The course identifies the unit process, process equipment and process integration changes that have enabled this scaling. It will explain how these new ion implantation and thermal processes enable the desired device structures and electrical functions. The scope of the course is front end of line (FEOL) process integration trends, from starting wafer through transistor salicide contact formation.

The course is targeted at Process Engineers, Product Engineers, Device Engineers, R& D Engineers, Failure Analysis Engineers, VLSI Design Engineers, Technicians, and other individuals who have a need to know more about state-of-the-art ion implantation and Rapid Thermal Processing.

Course Topics:

 
Leading-edge ion implantation process applications for:
 

  • Ultra-shallow Junction (USJ) Formation (Co-implants, PAI)
  • Transient Enhanced Diffusion (TED) Suppression
  • Dopant Activation Enhancement
  • Short Channel Effect (SCE) Suppression (Halo, SSR)
  • Device Leakage Suppression
  • Parasitic Capacitance & Resistance Reduction (Gate
  • Stack & SD engineering)
  • Multiple Vt Transistors
  • Dual-Poly-Gate Counter-doping
  • Gate Oxide Quality Enhancement & Thickness Control (dual & triple gate oxides)
  • Salicide Contact Enhancement
  • Transistor Isolation Structures (Twin-Well, Triple Well, Buried Layer Structures)


 

Leading-edge Thermal Processing for Ion Implantation Activation & Annealing:

  • Rapid Thermal Annealing (RTA)
  • Fast Ramp Rate (Spike) RTA
  • RTA Annealing Requirements for Different Implant Applications
  • Flash Annealing
  • Laser Annealing (melt & sub-melt)

L eading-edge Ion Implantation Equipment and Manufacturing Issues





COST: $595/Student


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